n-channel enhancement mode mosfet featur e 50v/0.2a, r ds(on) = 3.5 (max) @v gs = 5v . id = 0.2a r ds(on) = 10 (max) @v gs = 2 . 7 5 v . i d = 0 . 2 a super high dense cell design for extremely low r ds(on) . reliable and rugged. l o w t h r e s h o l d v o l t a g e ( 0 . 5 v ? 1 . 5 v ) m a k e i t i d e a l f o r l o w v o l t a g e a p p l i c a t i o n s . sot - 23 for surface mount package. so t - 23 a p p l i c a t i o n s power management in dc/dc converters portable and battery -powered products. absolute maximum ratings t a =25 unless otherwise noted p a r a m e t e r s y m b o l l i m i t u n i t s d r a i n-sourc e v o lta ge v ds 5 0 v ga te -sourc e v o lta ge v gs 20 v d r a i n c u rre nt-c ontinuous i d 0. 2 a electrical characteristics t a =25 unless otherwise noted p a r a me te r s y m b o l t e s t c o n d i t i o n s m i n t y p. m a x u nits off characteristics d r a i n to sourc e b r e a kdow n v o lta ge b v d s s v g s = 0 v , id = 250a 5 0 - - v vds =5 0 v , vgs =0 v - - 0 . 5 z e ro-g a t e v o lta ge d r a i n c u rre nt id ss vds =2 5 v , vgs =0 v - - 0 . 1 a g a te b ody l e a k a g e c u rre nt, forw a r d ig ssf v g s = 20v , v d s = 0 v - - 100 na g a te b ody l e a k a g e c u rre nt, r e ve rse ig ssr v g s = - 20v , v d s = 0 v - - -100 na on characteristics g a te t h re shold v o lta ge v g s (th) v g s = v d s , id = 1 . 0 m a 0. 5 - 1. 5 v vgs =5 .0 v , id =0 .2 a - - 3 . 5 s t at i c dr ai n - s o u r ce on - r es i s t a n ce rds ( on) vgs =2 .7 5 v , id =0 .2 a - - 1 0 drain-sour ce diode characteri stics and maximum ratings d r a i n-sourc e d i ode forw a r d v o lta ge v s d v g s = 0 v , is= 0 . 2 a 2. 5 v sales@zpsemi.com www.zpsemi.com BSS138 1 of 3
t y pical characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 01 23 45 vds,drain-to-source voltage(volts) id,drain current(amps) 0 0.1 0.2 0.3 0.4 0.5 0.6 01 23 45 vgs,gate-to-source voltage(volts) id,drain current(amps) vgs =3 4 5 6 7 8 10v vgs =2 .7 5 vgs =2 .5 t j 125 tj 25 vgs =1 .5 0 figur e 1 output characteristics figur e 2 t r ansfer characteristics 62 63 64 65 66 67 68 69 70 71 72 0 5 0 100 150 200 tj.junction temperature( ) bvdss,normalized drain-source breakdown voltage(volts) 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 0 5 0 100 150 200 tj. ju nction temperature vth. gate-source threshold voltage (v) i d=250ua id =1.0 m a figur e 3 br eakdow n v o ltage v a riation figur e 4 gate thr e shold v a riation w i t h t e m p e r a t u r e w i t h t e m p e r a t u r e sales@zpsemi.com www.zpsemi.com BSS138 2 of 3
t y pical characteristics 0 1 2 3 4 5 6 7 8 9 0 5 0 100 150 200 tj.junction temperature( ) rds(on),normalized on-resistance() 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1 id-drain current(a) rds(on)-on resistance() 5v /0.2a vgs=2.75v 2.75v /0.2a vgs=5v figur e 5 o n - r e s i s t a n c e v a r i a t i o n f i g u r e 6 on-resistance vs. d r ain curr ent w i th t e mperatur e 0 2 4 6 8 10 12 0123456 vgs,gate-to-source voltage(volts) rds(on)-on resistance() 0.1 1 10 0 0.5 1 1.5 2 2.5 vsd-source-to-drain voltage(v) is-source current(a) t j 150 t j 25 id=0.2a figur e 7 on-resis ta nce vs. gate-to-sour c e fi gur e 8 sour ce-drain diode for w ard v o l t a g e v o l t a g e sales@zpsemi.com www.zpsemi.com BSS138 3 of 3
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